Characterization of ytterbium silicide ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Characterization of ytterbium silicide formed in ultra high vacuum
Author(s) :
Laszcz, Adam [Auteur]
Ratajczak, Jacek [Auteur]
Czerwinski, Andrzej [Auteur]
Katcki, Jerzy [Auteur]
Srot, Vesna [Auteur]
Max Planck Institute for Solid State Research
Phillipp, Fritz [Auteur]
Max Planck Institute for Solid State Research
van Aken, Peter A. [Auteur]
Max Planck Institute for Solid State Research
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Reckinger, Nicolas [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Larrieu, Guilhem [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Ratajczak, Jacek [Auteur]
Czerwinski, Andrzej [Auteur]
Katcki, Jerzy [Auteur]
Srot, Vesna [Auteur]
Max Planck Institute for Solid State Research
Phillipp, Fritz [Auteur]
Max Planck Institute for Solid State Research
van Aken, Peter A. [Auteur]
Max Planck Institute for Solid State Research
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Reckinger, Nicolas [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Larrieu, Guilhem [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Journal title :
Journal of Physics: Conference Series
Pages :
012056 (1--4)
Publisher :
IOP Science
Publication date :
2010
ISSN :
1742-6596
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The formation of ytterbium silicide fabricated by annealing at 480 °C forone hour has been studied by means of high resolution transmission electronmicroscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). ...
Show more >The formation of ytterbium silicide fabricated by annealing at 480 °C forone hour has been studied by means of high resolution transmission electronmicroscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). Theannealing process has been performed under ultra high vacuum (UHV) conditions.The formation of an amorphous silicide layer was observed between the Yb-layer andthe silicon substrate in the as-deposited sample. Ytterbium silicide observed afterannealing consists of two different layers: crystalline and amorphous ones. The studiesconfirmed that the formed crystalline layer is of the YbSi2-x phase, however, thestructure is different from the hexagonal AlB2 type.Show less >
Show more >The formation of ytterbium silicide fabricated by annealing at 480 °C forone hour has been studied by means of high resolution transmission electronmicroscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). Theannealing process has been performed under ultra high vacuum (UHV) conditions.The formation of an amorphous silicide layer was observed between the Yb-layer andthe silicon substrate in the as-deposited sample. Ytterbium silicide observed afterannealing consists of two different layers: crystalline and amorphous ones. The studiesconfirmed that the formed crystalline layer is of the YbSi2-x phase, however, thestructure is different from the hexagonal AlB2 type.Show less >
Language :
Anglais
Popular science :
Non
Source :
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