Control of III-V nanowire crystal structure ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Control of III-V nanowire crystal structure by growth parameter tuning [Invited]
Author(s) :
Dick, Kimberly A. [Auteur]
Skane University Hospital [Lund]
Caroff, Philippe [Auteur]
Skane University Hospital [Lund]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bolinsson, Jessica [Auteur]
Skane University Hospital [Lund]
Messing, Maria E. [Auteur]
Skane University Hospital [Lund]
Johansson, Jonas [Auteur]
Skane University Hospital [Lund]
Deppert, Knut [Auteur]
Skane University Hospital [Lund]
Wallenberg, L.R. [Auteur]
Skane University Hospital [Lund]
Samuelson, Lars [Auteur]
Skane University Hospital [Lund]
Skane University Hospital [Lund]
Caroff, Philippe [Auteur]
Skane University Hospital [Lund]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bolinsson, Jessica [Auteur]
Skane University Hospital [Lund]
Messing, Maria E. [Auteur]
Skane University Hospital [Lund]
Johansson, Jonas [Auteur]
Skane University Hospital [Lund]
Deppert, Knut [Auteur]
Skane University Hospital [Lund]
Wallenberg, L.R. [Auteur]
Skane University Hospital [Lund]
Samuelson, Lars [Auteur]
Skane University Hospital [Lund]
Journal title :
Semiconductor Science and Technology
Pages :
024009-1-11
Publisher :
IOP Publishing
Publication date :
2010
ISSN :
0268-1242
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, ...
Show more >In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III–V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.Show less >
Show more >In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III–V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.Show less >
Language :
Anglais
Popular science :
Non
Source :
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