Title :

Enhanced carrier injection in Schottky contacts using dopant segregation : a Monte Carlo research

Author(s) :

Pascual, E. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Martin, M.J. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Rengel, R. [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Larrieu, G. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Semiconductor Science and Technology

Pages :

025022

Publisher :

IOP Publishing

Publication date :

2009-01-20

ISSN :

0268-1242

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this paper we present a Monte Carlo research of the impact, on carrier transport, of including a dopant-segregated layer adjacent to the Schottky contact in back-to-back diodes. A comparison with a homogeneous structure ...
Show more >In this paper we present a Monte Carlo research of the impact, on carrier transport, of including a dopant-segregated layer adjacent to the Schottky contact in back-to-back diodes. A comparison with a homogeneous structure is developed, evidencing that the doped layer boosts the tunneling current through the Schottky barrier, thus significantly improving the injection of carriers at the contact. We have carried out a complete study of carrier injection and transport in the region close to the reverse-biased contact together with the analysis of internal quantities such as conduction band, carrier density and electric field. The effect of temperature on the current is also evaluated. The study of the velocity distribution functions and the average number of scatterings undergone by the carriers reveals that devices with dopant segregation exhibit an enhancement of the ballistic transport in the first nanometers close to the Schottky contact.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL