Critical thickness for InAs quantum dot formation on (311)B InP substrates

Caroff, Philippe; Bertru, N.; Lu, W.; Elias, G.; Dehaese, O.; Létoublon, Antoine; Le Corre, A.

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1016/j.jcrysgro.2009.02.048

Title :

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Author(s) :

Caroff, Philippe [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Bertru, N. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Lu, W. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Elias, G. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Dehaese, O. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Létoublon, Antoine [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Le Corre, A. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]

Journal title :

Journal of Crystal Growth

Pages :

2626-2629

Publisher :

Elsevier

Publication date :

2009

ISSN :

0022-0248

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron ...
Show more >We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the critical thickness has been observed as a function of substrate temperature. We assume that is related to large As/P exchange on InP surface which leads to the formation of extra InAs on surface. Then, change of critical thickness during QD stacking has been investigated. When capping layers were grown continuously a large decrease of the critical thickness was observed as a function of the number of QD layers. In contrast, when capping layers were grown in two steps (double cap procedure) a nearly constant critical thickness was measured. We propose an explanation based on stress-driven mass transport and As/P exchange on InP surface to interpret such results.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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