Title :

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Author(s) :

Breil, Nicolas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Halimaoui, Aomar [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Pouydebasque, Arnaud [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Larrieu, Guilhem [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laszcz, Adam [Auteur]
Ratajcak, J. [Auteur]
Skotnicki, Thomas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]

Journal title :

IEEE Electron Device Letters

Pages :

152-154

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2008

ISSN :

0741-3106

English keyword(s) :

Etching
platinum
Schottky barriers
semiconductor-metal interfaces
silicon

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. ...
Show more >In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction with silicon or standing on insulating layers can be transformed into the PtGe2 phase. The solubility of this phase in a sulfuric peroxide mixture (SPM) with-out altering PtSi is demonstrated. The suitability and scalability of the proposed integration scheme is shown through the successful integration and characterization of PtSi source/drain contacts in p-type MOSFETs.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL