Title :

Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs

Author(s) :

Di Giacomo, Valeria [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Santarelli, Alberto [Auteur]
Alma Mater Studiorum Università di Bologna = University of Bologna [UNIBO]
Filicori, Fabio [Auteur]
Alma Mater Studiorum Università di Bologna = University of Bologna [UNIBO]
Raffo, Antonio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Vannini, Giorgio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Aubry, Raphaël [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2nd European Microwave Integrated Circuits Conference, EuMIC 2007

City :

Munich

Country :

Allemagne

Start date of the conference :

2007-10-08

Book title :

Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Publisher :

IEEE, Piscataway, NJ, USA

Publication date :

2007

English keyword(s) :

Aluminum gallium nitride
HEMTs
MODFETs
Dispersion
Gallium nitride
Cutoff frequency
Gallium arsenide
PHEMTs
Extrapolation
Computational modeling

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which ...
Show more >Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL