Title :

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Author(s) :

Torres, J. [Auteur]
Institut d’Electronique et des Systèmes [IES]
Térahertz, hyperfréquence et optique [TéHO]
Nouvel, P. [Auteur]
Institut d’Electronique et des Systèmes [IES]
Chusseau, Laurent [Auteur]
Institut d’Electronique et des Systèmes [IES]
Radiations et composants [RADIAC]
Teppe, F. [Auteur]
Shchepetov, A. [Auteur]
Bollaert, Sylvain [Auteur]

Conference title :

European Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, CLEOE/IQEC 2007

City :

Munich

Country :

Allemagne

Start date of the conference :

2007

Book title :

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference

Publisher :

IEEE, Piscataway, NJ, USA

Publication date :

2007

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd ...
Show more >We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion lawShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL