Titre :

Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

Auteur(s) :

Kuzmik, J. [Auteur]
Bychikhin, S. [Auteur]
Pogany, D. [Auteur]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pichonat, Emmanuelle [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Morvan, E. [Auteur]

Titre de la revue :

Journal of Applied Physics

Pagination :

054508-1-6

Éditeur :

American Institute of Physics

Date de publication :

2007

ISSN :

0021-8979

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects on temperature distribution ...
Lire la suite >Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects on temperature distribution for GaN layers on Si, SiC, or sapphire substrates. Micro-Raman method is used for the investigation of TBR at the GaN/Si interface while the transient interferometric mapping (TIM) method is used for investigation of GaN/SiC and GaN/sapphire systems. Thermal modeling is used to analyze the experimental data. We found TBR to be ~7×10−8 m2 K/W for GaN/Si and ~1.2×10−7 m2 K/W for GaN/SiC interfaces. The role of TBR at the GaN/sapphire interface in the poor heat transfer from GaN to substrate is found to be less important. It is suggested that the substrate cooling efficiency may be improved if fewer defects are present at the interface to the GaN epistructure. ©2007 American Institute of PhysicsLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL