Titre :

A 200-GHz true E-mode low-noise MHEMT

Auteur(s) :

Maher, Hassan [Auteur]
OMMIC
El Makoudi, Ikram [Auteur]
OMMIC
Frijlink, Peter [Auteur]
OMMIC
Smith, Derek [Auteur]
OMMIC
Rocchi, Marc [Auteur]
OMMIC
Bollaert, Sylvain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

IEEE Transactions on Electron Devices

Pagination :

1626-1632

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2007-07

ISSN :

0018-9383

Mot(s)-clé(s) en anglais :

Logic gates
Threshold voltage
Leakage currents
HEMTs
Indium
Resistance

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content ...
Lire la suite >In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content of 40% for the AlInAs/GalnAs/AlInAs MHEMT, the difference between the Schottky-barrier height and the conductance band-offset (channel/barrier) of the device is enhanced compared with 53% indium devices lattice matched to an InP substrate. A true E-MHEMT is demonstrated with an extremely low leakage current, wide gate-voltage swing, and excellent dynamic performance. The threshold-voltage standard deviation is only 12 mV on four wafers. The device presents an excellent unity gain cutoff frequency of 204 GHz with state-of-the-art NF min = 0.69 dB and Gass = 10 dB at 30 GHz. This transistor is a good candidate for high-speed digital, high-frequency analog, or mixed applications, where the low noise, low-power consumption, and digital capabilities of this technology are distinct advantages.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL