Title :

In situ laser assisted diagnostics on growth of thick PACVD organosilicon films

Author(s) :

Supiot, Philippe [Auteur]
Vivien, Celine [Auteur]
Aimard, M. [Auteur]
Sumera, R. [Auteur]
Bocquet, Bertrand [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Pages :

287-297

Publisher :

Begell House

Publication date :

2005

ISSN :

1093-3611

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) ...
Show more >The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a nitrogen microwave discharge. The process control, i.e. the knowledge about the relation between film thickness and deposition duration can only be achieved through in situ diagnostics. In this aim, the optical intensity of a laser beam signal after reflection on the substrate is monitored during deposition. The relevance of the analysis method has been tested for thicknesses close to 17 micrometers. The reproducibility of the signal is discussed according to the film properties. A first determination of the surface roughness has been proposed after comparison with theoretical reflectance. The resulting temporal evolution of the signal is compared with the film's thickness determined by profiler measurements for different deposition durations. Linearity of the growth rate deduced from reflected signal with the effective one has been demonstrated.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL