Title :

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Author(s) :

Di Forte-Poisson, Marie-Antoinette [Auteur]
Thales Research and Technology [Palaiseau]
Magis, M. [Auteur]
Thales Research and Technology [Palaiseau]
Tordjman, Maurice [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Peschang, M. [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Di Persio, J. [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Quéré, Raymond [Auteur]
Institut de Recherche en Communications Optiques et Microondes [IRCOM]
Grimbert, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hoel, Virginie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DUCATTEAU, Damien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

The Twelfth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XII)

City :

Lahina

Country :

Etats-Unis d'Amérique

Start date of the conference :

2004-05-30

Book title :

Materials Research Society Symposium Proceedings, 798

Publisher :

Materials Research Society, Warrendale, PA, USA

Publication date :

2004

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostructures grown on Silicon Carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The ...
Show more >This paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostructures grown on Silicon Carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/GaN epilayers has been identified and studied using High Resolution X-Ray diffraction (HR-XRD), AFM, C-V and sonogauge measurements. The SiC substrate surface preparation (both ex-situ and in-situ) and the nucleation layer growth conditions (growth temperature, thickness, composition and strain) have been found to be key steps of the GaAlN/GaN/SiC growth process. SiC substrates from different suppliers have been evaluated and their influence on the physical properties of the GaAlN/GaN HEMT structures investigated. Static characteristics of the devices such as maximum drain current Idss or pinch-off voltage have been correlated with the nucleation layer composition of the HEMT structure and the defect density of the SiC substrate. First devices measured at 10 GHz using a load pull system exhibited CW output power in excess of 2.8 W/mm for a gate length of 0.5 μm. Under static measurements, we found an Idss around 1 A/mm and a pinch-off voltage of –5 V.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL