Frequency difference generation in the ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Title :
Frequency difference generation in the terahertz region using LTG-GaAs photodetector
Author(s) :
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mouret, Gaël [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Lampin, Jean-Francois [Auteur]
Masselin, Pascal [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Mounaix, P. [Auteur]
Mollot, F. [Auteur]
Lippens, D. [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mouret, Gaël [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Lampin, Jean-Francois [Auteur]

Masselin, Pascal [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Mounaix, P. [Auteur]
Mollot, F. [Auteur]
Lippens, D. [Auteur]
Conference title :
8th International Conference on Terahertz Electronics
City :
Darmstadt
Country :
Allemagne
Start date of the conference :
2000-09-28
English keyword(s) :
Terahertz
photomixing
LTG GaAs
photomixing
LTG GaAs
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a ...
Show more >We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown 200 deg C GaAs epilayer. Two TiSapphire laser beams 30 mW focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.Show less >
Show more >We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown 200 deg C GaAs epilayer. Two TiSapphire laser beams 30 mW focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :