Title :

A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm

Author(s) :

Boudrissa, Mustafa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, Elisabet [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM

City :

Nara

Country :

Japon

Start date of the conference :

2001-05-14

Book title :

Proceedings of the 13th International Conference on Indium Phosphide and Related Materials, IPRM 2001

Publisher :

IEEE, Piscataway, NJ, USA

Publication date :

2001

English keyword(s) :

Indium phosphide
HEMTs
Substrates
Impact ionization
Doping
Conducting materials
Epitaxial growth
Electrons
Frequency
Temperature

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We have improved power performance by studying three different GaInAs/InP composite channel structures. Also, different gate to drain extension devices have been processed. By using composite channel devices, we benefit ...
Show more >We have improved power performance by studying three different GaInAs/InP composite channel structures. Also, different gate to drain extension devices have been processed. By using composite channel devices, we benefit from the better ionization threshold energy of InP compared to GaInAs (1.69 eV against 0.92 eV). The difference of conduction band offset between the two materials (/spl Delta/E/sub C/=0.2 eV) makes possible electron transfer from GaInAs to InP layers with the same electronic properties. New process technologies have been applied to compare these structures. The gate current resulting from the impact ionization phenomena is reduced to 30 /spl mu/A at V/sub DS/=4.5 V for a large extension device, which constitute the best result among the three structures. Also, we improve power performances at 60 GHz by reducing the GaInAs channel width and substituting delta doping by bulk doping. The best device performance is 422 mW/mm at V/sub DS/=3 V and V/sub GS/=0.7 V.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL