Ferroelectric and piezoelectric properties of Nb doped PZT films

Haccart, T.; Cattan, Eric; Remiens, Denis; Hiboux, S.; Muralt, P.

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1080/10584580108016905

Titre :

Ferroelectric and piezoelectric properties of Nb doped PZT films

Auteur(s) :

Haccart, T. [Auteur]
Université de Valenciennes et du Hainaut-Cambrésis [UVHC]
Cattan, Eric [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hiboux, S. [Auteur]
Université de Valenciennes et du Hainaut-Cambrésis [UVHC]
Muralt, P. [Auteur]
Université de Valenciennes et du Hainaut-Cambrésis [UVHC]

Titre de la revue :

Integrated Ferroelectrics

Pagination :

239-248

Éditeur :

Taylor & Francis

Date de publication :

2001

ISSN :

1058-4587

Mot(s)-clé(s) en anglais :

r.f. sputtering
Nb doped PZT films
Dielectric
Ferroelectric
piezoelectric coefficients

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. The Niobium, Nb, concentration varied from 1 to 7 at.% ...
Lire la suite >Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. The Niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.%. The effects of the Nb introduction on the PZT electrical properties, i.e, dielectric, ferroelectric and piezoelectric ones were investigated. The relative dielectric constant (εr) was very sensitive to the Nb introduction; εr reaches 1100 for a PNZT film doped at 2 at.% in comparison to 820 for a PZT film. The ferroelectric properties were also dependent of the doping level; in particular the remnant polarization reaches its maximum value for a 2 at.% Nb doped PZT film. The introduction of Nb enhances the piezoelectric properties of the films. The maximum value of d33 varied from 55 pm/V for PZT films to 115 pm/V for a 2 at.% Nb doped films. For this doping level, e31rem reaches its maximum value: − 4.6 C/m2. PNZT thin films, with weak Nb concentration (comprised between 1 to 2 at.%) are suitable for microsystems realization.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :