Titre :

Ultrahigh frequency DC-to-DC converters using GaAs power switches

Auteur(s) :

Ajram, Sami [Auteur]
ATMEL [Rousset]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Salmer, Georges [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

IEEE TRANSACTIONS ON POWER ELECTRONICS

Pagination :

594-602

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2001

ISSN :

0885-8993

Mot(s)-clé(s) en anglais :

Frequency conversion
DC-DC power converters
Switching converters
Gallium arsenide
Prototypes
MOSFET circuits
Power MOSFET
MESFETs
HEMTs
Silicon

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power ...
Lire la suite >A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over silicon ones have been established and illustrated. Hybrid technology prototypes of DC-to-DC power converters operating above 10 MHz and exclusively using GaAs components have been realized: for a nonoptimized boost converter operating at 100 MHz, a power efficiency of 54% has been achieved with a 6 V/12 V conversion ratio and an output power of 1.5 W. For optimized prototypes, using high frequency assembly techniques, an efficiency of 80% at 50 MHz, 74% at 100 MHz and 60% at 250 MHz have been obtained with 6 V/12 V and 3 WLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL