Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Legrand, Bernard; Agache, Vincent; Nys, Jean-Philippe; Melin, Thierry; SENEZ, Vincent; Stiévenard, Didier

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1063/1.1420761

Titre :

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Auteur(s) :

Legrand, Bernard [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Agache, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nys, Jean-Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Melin, Thierry [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
SENEZ, Vincent [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Stiévenard, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Journal of Applied Physics

Pagination :

106-111

Éditeur :

American Institute of Physics

Date de publication :

2002

ISSN :

0021-8979

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process ...
Lire la suite >We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top silicon layer, and the presence of a native oxide on this top layer. The island size distribution is also studied. To follow the chemical evolution of the top layer, we used in situ Auger electron spectroscopy in an ultrahigh vacuum chamber. The island morphology is studied using ex situ atomic force microscopy (AFM). The formation temperature increases with the thickness of the top silicon layer and can be explained by thermal stress induced at the Si/SiO2 interface. From a technological point of view, this study shows the limitation of a SOI substrate with a thin silicon top layer under thermal treatment. On the other hand, it opens up an easy way in which to build silicon dots on an insulator. Finally, we present preliminary data that show the possibility of charging these nanocrystallites with an AFM tipLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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