Efficient intraband optical transitions in Si nanocrystals

Allan, Guy; Delerue, Christophe

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1103/PhysRevB.66.233303

Titre :

Efficient intraband optical transitions in Si nanocrystals

Auteur(s) :

Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pagination :

233303/1-4

Éditeur :

American Physical Society

Date de publication :

2002

ISSN :

1098-0121

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational ...
Lire la suite >Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational mode. New types of transitions are reported, with no equivalence in direct gap semiconductors, between the confined states in the six valleys of the conduction band. They involve phonons with wave vectors either at the center or at the edge of the Brillouin zone. The efficiency of the main no-phonon and phonon-assisted transitions is comparable to the one in III-V semiconductor quantum dots.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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