Reactive ion beam etching effects on maskless PZT properties

Soyer, Caroline; Cattan, Eric; Remiens, Denis

Document type :

Article dans une revue scientifique

DOI :

10.1080/10584580215465

Title :

Reactive ion beam etching effects on maskless PZT properties

Author(s) :

Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cattan, Eric [Auteur]
Remiens, Denis [Auteur]

Journal title :

Integrated Ferroelectrics

Pages :

221-229

Publisher :

Taylor & Francis

Publication date :

2002

ISSN :

1058-4587

English keyword(s) :

Pzt
Ion Beam Etching
Etching Damage

HAL domain(s) :

Physique [physics]

English abstract : [en]

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration ...
Show more >Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment, and that the grain boundary zone is preferentially etched. For some etching parameters, we have also studied electrical damage. Carrying out C(V) and hysteresis loops P(E) measurements before and after etching have evidenced these degradation. We have noted a large permittivity decrease after etching process whatever the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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Open access
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