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Reactive ion beam etching effects on ...
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Document type :
Article dans une revue scientifique
DOI :
10.1080/10584580215465
Title :
Reactive ion beam etching effects on maskless PZT properties
Author(s) :
Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cattan, Eric [Auteur]
Remiens, Denis [Auteur]
Journal title :
Integrated Ferroelectrics
Pages :
221-229
Publisher :
Taylor & Francis
Publication date :
2002
ISSN :
1058-4587
English keyword(s) :
Pzt
Ion Beam Etching
Etching Damage
HAL domain(s) :
Physique [physics]
English abstract : [en]
Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration ...
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Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment, and that the grain boundary zone is preferentially etched. For some etching parameters, we have also studied electrical damage. Carrying out C(V) and hysteresis loops P(E) measurements before and after etching have evidenced these degradation. We have noted a large permittivity decrease after etching process whatever the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
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