Reactive ion beam etching effects on maskless PZT properties

Soyer, Caroline; Cattan, Eric; Remiens, Denis

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1080/10584580215465

Titre :

Reactive ion beam etching effects on maskless PZT properties

Auteur(s) :

Soyer, Caroline [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cattan, Eric [Auteur]

Remiens, Denis [Auteur]

Titre de la revue :

Integrated Ferroelectrics

Pagination :

221-229

Éditeur :

Taylor & Francis

Date de publication :

2002

ISSN :

1058-4587

Mot(s)-clé(s) en anglais :

Pzt
Ion Beam Etching
Etching Damage

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration ...
Lire la suite >Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment, and that the grain boundary zone is preferentially etched. For some etching parameters, we have also studied electrical damage. Carrying out C(V) and hysteresis loops P(E) measurements before and after etching have evidenced these degradation. We have noted a large permittivity decrease after etching process whatever the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :