Titre :

Monte Carlo study of electron transport in AlSb/InAs HEMTS structures

Auteur(s) :

Thobel, Jean-Luc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bonno, Olivier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boutry, Hervé [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dessenne, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

14th Indium Phosphide and Related Materials Conference

Ville :

Stockholm

Pays :

Suède

Date de début de la manifestation scientifique :

2002-05-12

Titre de l’ouvrage :

Proceedings of 14th Indium Phosphide and Related Materials Conference, IPRM 2002

Éditeur :

IEEE, Piscataway, NJ, USA

Date de publication :

2002

Mot(s)-clé(s) en anglais :

Monte Carlo methods
HEMTs
MODFETs
Scattering
Electron mobility
Wave functions
Poisson equations
Eigenvalues and eigenfunctions
Conducting materials
Effective mass

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron ...
Lire la suite >A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron states are obtained from a Ben Daniel-Duke equation with energy-dependent effective mass. The effect of band mixing on scattering rates is included, at an approximate level, through the use of a "Bloch overlap factor". It has been shown that neglecting this factor leads to a strong underestimation of electron mobility, whereas our model gives realistic values. We have studied a standard single well structure and a more sophisticated double well structure. In the latter case, the electron transfer between the two coupled wells has been discussed.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL