Title :

0.25 µm fully-depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with partially-depleted devices for high frequency noise parameters

Author(s) :

Vanmackelberg, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raynaud, C. [Auteur]
Faynot, O. [Auteur]
Pelloie, J.L. [Auteur]
Tabone, C. [Auteur]
Grouillet, A. [Auteur]
Martin, F. [Auteur]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Picheta, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mackowiak, E. [Auteur]
ST Microélectronics
Llinares, P. [Auteur]
ST Microélectronics
Vanhoenacker, D. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]

Journal title :

Solid-State Electronics

Pages :

379-386

Publisher :

Elsevier

Publication date :

2002-03

ISSN :

0038-1101

English keyword(s) :

SOI
MOSFET
Characterization
Microwave
Noise

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise ...
Show more >The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NFmin of 0.8 dB and high Gass of 13 dB at 6 GHz, at , at 80 μm total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at and Jds=100 mA/mm.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL