Titre :

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Auteur(s) :

Lampin, E. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cristiano, Fuccio [Auteur]
Centre d'élaboration de matériaux et d'études structurales [CEMES]
Lamrani, Y. [Auteur]
Centre d'élaboration de matériaux et d'études structurales [CEMES]
Claverie, Alain [Auteur]
Centre d'élaboration de matériaux et d'études structurales [CEMES]
Colombeau, B. [Auteur]
University of Surrey [UNIS]
Cowern, N.E.B. [Auteur]
University of Surrey [UNIS]

Titre de la revue :

Journal of Applied Physics

Pagination :

7520-7525

Éditeur :

American Institute of Physics

Date de publication :

2003

ISSN :

0021-8979

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two ...
Lire la suite >The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method, respectively) are presented and tested against a variety of experimental conditions. They are first applied to a transient enhanced diffusion experiment carried out on a structure containing several B delta-doped layers, in which the amount of diffusion of the different layers is accurately predicted. The fully coupled method is then used to simulate the diffusion of ultrashallow B-implanted profiles. This work definitely demonstrates the relevance of accurate physical defect models for the successful design of ultrashallow junctions in future generations of integrated circuitsLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL