The effect of LaNiO3 bottom electrode ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films
Author(s) :
Wang, G.S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Shanghai Institute of Technical Physics [SITP]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Cattan, Eric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Shanghai Institute of Technical Physics [SITP]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Soyer, Caroline [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Cattan, Eric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Journal title :
Journal of Crystal Growth
Pages :
184-189
Publisher :
Elsevier
Publication date :
2005
ISSN :
0022-0248
English keyword(s) :
X-ray diffraction
Perovskite
Ferroelectric materials
Perovskite
Ferroelectric materials
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by ...
Show more >The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films exhibit a single perovskite phase with (1 0 0) preferred orientation. α1 0 0>94% can be obtained for PZT deposited on LNO bottom electrode with thickness greater than 60 nm. SEM measurements show the PZT films have a columnar structure. The LNO thickness effect on Pr, Ec, and dielectric constant were investigated and showed that the thickness of the LNO bottom electrode caused drastic changes in Pr, dielectric constant and dielectric loss. Sub-switching fields dependence of permittivity were investigated for PZT films and showed that both reverible and irreversible component of the permittivity increase with the thickness of LNO electrode.Show less >
Show more >The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films exhibit a single perovskite phase with (1 0 0) preferred orientation. α1 0 0>94% can be obtained for PZT deposited on LNO bottom electrode with thickness greater than 60 nm. SEM measurements show the PZT films have a columnar structure. The LNO thickness effect on Pr, Ec, and dielectric constant were investigated and showed that the thickness of the LNO bottom electrode caused drastic changes in Pr, dielectric constant and dielectric loss. Sub-switching fields dependence of permittivity were investigated for PZT films and showed that both reverible and irreversible component of the permittivity increase with the thickness of LNO electrode.Show less >
Language :
Anglais
Popular science :
Non
Source :
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