Millimeter-wave pulsed oscillator global ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical and carrier transport physical coupled models
Author(s) :
Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Oliver [Auteur]
Thomson-CSF Laboratoire Central de Recherches [THOMSON-CSF LCR]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Oliver [Auteur]
Thomson-CSF Laboratoire Central de Recherches [THOMSON-CSF LCR]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Microwave Theory and Techniques
Pages :
929-934
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
1999
ISSN :
0018-9480
English keyword(s) :
EMP radiation effects
Oscillators
Electromagnetic modeling
Time domain analysis
Circuits
Radio frequency
Semiconductor diodes
Electromagnetic coupling
Electrothermal effects
Millimeter wave technology
Oscillators
Electromagnetic modeling
Time domain analysis
Circuits
Radio frequency
Semiconductor diodes
Electromagnetic coupling
Electrothermal effects
Millimeter wave technology
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier ...
Show more >The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power stable operation of a 94-GHz oscillator. The results of a comparison between simulations, using two different types of passive radio-frequency load circuits, including experimental measurements, are presented and discussed. They tend to demonstrate that it is now possible to develop accurate millimeterwave-circuit predictive models even for application based on a nonlinear thermal and electrical transient operation such as IMPATT oscillators.Show less >
Show more >The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power stable operation of a 94-GHz oscillator. The results of a comparison between simulations, using two different types of passive radio-frequency load circuits, including experimental measurements, are presented and discussed. They tend to demonstrate that it is now possible to develop accurate millimeterwave-circuit predictive models even for application based on a nonlinear thermal and electrical transient operation such as IMPATT oscillators.Show less >
Language :
Anglais
Popular science :
Non
Source :