Microwave Optomechanically Induced Transparency and Absorption

Kumar, Sumit; Cattiaux, Dylan; Collin, Eddy; Fefferman, Andrew; Zhou, Xin

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...)

URL permanente :

http://hdl.handle.net/20.500.12210/55000

Titre :

Microwave Optomechanically Induced Transparency and Absorption

Auteur(s) :

Kumar, Sumit [Auteur]
Ultra-basses températures [NEEL - UBT]
Cattiaux, Dylan [Auteur]
Ultra-basses températures [NEEL - UBT]
Collin, Eddy [Auteur]
Ultra-basses températures [NEEL - UBT]
Fefferman, Andrew [Auteur]
Ultra-basses températures [NEEL - UBT]
Zhou, Xin [Auteur]

Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Discipline(s) HAL :

Physique [physics]/Physique Quantique [quant-ph]

Résumé en anglais : [en]

High-quality microwave amplifiers and notch-filters can be made from microwave optomechanical systems in which a mechanical resonator is coupled to a microwave cavity by radiation pressure. These amplifiers and filters ...
Lire la suite >High-quality microwave amplifiers and notch-filters can be made from microwave optomechanical systems in which a mechanical resonator is coupled to a microwave cavity by radiation pressure. These amplifiers and filters rely on optomechanically induced transparency (OMIT) and absorption (OMIA), respectively. Such devices can amplify microwave signals with large, controllable gain, high dynamic range and very low noise. Furthermore, extremely narrowband filters can be constructed with this technique. We briefly review previous measurements of microwave OMIT and OMIA before reporting our own measurements of these phenomena, which cover a larger parameter space than has been explored in previous works. We find excellent agreement between our measurements and the predictions of input/output theory, thereby guiding further development of microwave devices based on nanomechanics.Lire moins >

Langue :

Anglais

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2021-07-30T04:01:20Z

Fichiers

http://arxiv.org/pdf/2104.09208
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