Toward the growth of self-catalyzed ZnO ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
PMID :
Titre :
Toward the growth of self-catalyzed ZnO nanowires perpendicular to the surface of silicon and glass substrates, by pulsed laser deposition
Auteur(s) :
El Zein, Basma [Auteur correspondant]
Optoélectronique - IEMN [OPTO - IEMN]
Yao, Yingbang [Auteur]
Guangdong University of Technology
Barham, Ahmad S. [Auteur]
Dogheche, El Hadj [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Jabbour, Ghassan E. [Auteur]
University of Ottawa [Ottawa]
Optoélectronique - IEMN [OPTO - IEMN]
Yao, Yingbang [Auteur]
Guangdong University of Technology
Barham, Ahmad S. [Auteur]
Dogheche, El Hadj [Auteur]

Optoélectronique - IEMN [OPTO - IEMN]
Jabbour, Ghassan E. [Auteur]
University of Ottawa [Ottawa]
Titre de la revue :
Materials
Pagination :
4427
Éditeur :
MDPI
Date de publication :
2020
ISSN :
1996-1944
Mot(s)-clé(s) en anglais :
zinc oxide
seed layer
vertically oriented nanowires
polar nanowires
glass
ITO substrates
pulsed laser deposition
seed layer
vertically oriented nanowires
polar nanowires
glass
ITO substrates
pulsed laser deposition
Discipline(s) HAL :
Chimie/Matériaux
Résumé en anglais : [en]
Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in ...
Lire la suite >Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in the form of nanowall network with honey comb structure allows the growth of high quality, self-forming, and vertically-oriented nanowires at relatively low temperature (<400 degrees C) and under argon atmosphere at high pressure (>5 Torr). Many parameters were shown to affect the growth of the ZnO nanowires such as gas pressure, substrate-target distance, and laser energy. Growth of a c-axis-crystalline array of nanowires growing vertically from the energetically favorable sites on the seed layer is observed. Nucleation occurs due to the matching lattice structure and the polar nature of the ZnO seed layer. Morphological, structural, and optical properties were investigated. X-ray diffraction (XRD) revealed highly c-axis aligned nanowires along the (002) crystal plane. Room temperature photoluminescence (PL) measurements showed a strong and narrow bandwidth of Ultraviolet (UV) emission, which shifts to lower wavelength with the increase of pressure.Lire moins >
Lire la suite >Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in the form of nanowall network with honey comb structure allows the growth of high quality, self-forming, and vertically-oriented nanowires at relatively low temperature (<400 degrees C) and under argon atmosphere at high pressure (>5 Torr). Many parameters were shown to affect the growth of the ZnO nanowires such as gas pressure, substrate-target distance, and laser energy. Growth of a c-axis-crystalline array of nanowires growing vertically from the energetically favorable sites on the seed layer is observed. Nucleation occurs due to the matching lattice structure and the polar nature of the ZnO seed layer. Morphological, structural, and optical properties were investigated. X-ray diffraction (XRD) revealed highly c-axis aligned nanowires along the (002) crystal plane. Room temperature photoluminescence (PL) measurements showed a strong and narrow bandwidth of Ultraviolet (UV) emission, which shifts to lower wavelength with the increase of pressure.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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- https://hal.archives-ouvertes.fr/hal-03321538/document
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- https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579646/pdf
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- https://hal.archives-ouvertes.fr/hal-03321538/document
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- ElZein_2020_materials-13-04427-v2.pdf
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