Humidity effects on the electrical properties ...
Document type :
Article dans une revue scientifique
Title :
Humidity effects on the electrical properties of hexagonal boron nitride thin films
Author(s) :
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Thevenin, P. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Bakhtiar, H. [Auteur]
Malaysian University of Technology
Bath, A. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Thevenin, P. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Bakhtiar, H. [Auteur]
Malaysian University of Technology
Bath, A. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Journal title :
Thin Solid Films
Pages :
277-286
Publisher :
Elsevier
Publication date :
2005-01
ISSN :
0040-6090
HAL domain(s) :
Physique [physics]/Physique [physics]/Optique [physics.optics]
English abstract : [en]
Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function ...
Show more >Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current–voltage measurements were performed, as a function of humidity, using metal–insulator–semiconductor and metal–insulator–metal structures. Typical resistivities were found in the range 1013–1014 Ω cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.Show less >
Show more >Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current–voltage measurements were performed, as a function of humidity, using metal–insulator–semiconductor and metal–insulator–metal structures. Typical resistivities were found in the range 1013–1014 Ω cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
Files
- https://hal.archives-ouvertes.fr/hal-00323137/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-00323137/document
- Open access
- Access the document
- Soltani2005.pdf
- Open access
- Access the document
- document
- Open access
- Access the document