Titre :

Effect of In0.70Ga0.30As quantum dot insertion in the middle cell of InyGa1-yP/InxGa1-xAs/Ge triple-junction for solar cells

Auteur(s) :

Aissat, Abdelkader [Auteur correspondant]
Faculté De Technologie Blida1
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nacer, Said [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Superlattices and Microstructures

Pagination :

106760 -

Éditeur :

Elsevier

Date de publication :

2021-01-31

ISSN :

0749-6036

Mot(s)-clé(s) en anglais :

New materials
Quantum dot
Solar cell
Optoelectonic

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs middle ...
Lire la suite >This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs middle cell material. Current density-voltage (J-V), external quantum efficiency (EQE) and capacitance-voltage (C-V) characteristics have been simulated and discussed. Results show that 30 pairs of In0.70Ga0.30As (QD)/GaAs (barrier) in the middle cell provide a relative enhancement of 13% in EQE in the 900–1000 nm wavelength range. This leads to a short-circuit current of 20 mA/cm2, an open circuit voltage of 2.3 V, a fill factor of 81.73%, and a conversion efficiency of 39.03%. The C-V revealed that a relatively high number of interfacial states are present in the 3-J cell structure including the QD layers, which decreases the open circuit voltage. In this study we benefited 18% of relative efficiency.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL