Titre :

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Auteur(s) :

Ponchel, Freddy [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Remiens, Denis [Auteur]
Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN [MAMINA - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ghalem, Areski [Auteur]
Lasri, Tuami [Auteur]
Microtechnology and Instrumentation for Thermal and Electromagnetic Characterization - IEMN [MITEC - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

International Journal of Materials Engineering Innovation

Pagination :

327

Date de publication :

2014

ISSN :

1757-2754

Mot(s)-clé(s) en anglais :

Ferroelectric thin films
Microwave frequency dielectric performances
Sputtering
Tunability

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Matériaux

Résumé en anglais : [en]

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for ...
Lire la suite >The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline quality of the films a buffer layer is introduced systematically. The films have a pure perovskite structure. The microwave test structures are coplanar line waveguides that give a complete microwave characterisation up to 67 GHz. The determination of the tunability properties at microwave frequency is obtained by measurements of the scattering parameters coupled with software, written by the authors, based on a two-dimensional vector finite element method. At 67 GHz, the BST tunability reaches a value of 29% with 30 V maximum applied voltage and the PST attains a value of 60% at the same condition. PST appears as a promising alternative material to BST for microwave tunable devices.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL