Titre :

Experimental Investigation on the Bias and Temperature Dependence of the Forward Transmission Coefficient for HEMT Technologies

Auteur(s) :

Alim, Mohammad Abdul [Auteur]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Crupi, Giovanni [Auteur]
Università degli Studi di Messina = University of Messina [UniMe]

Titre de la manifestation scientifique :

2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS)

Ville :

Nis

Date de début de la manifestation scientifique :

2021-10-20

Titre de l’ouvrage :

2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS)

Éditeur :

IEEE

Mot(s)-clé(s) en anglais :

Ambient temperature
Bias condition
Forward transmission coefficient
HEMT
Scattering-parameter measurements

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S 21 ) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out ...
Lire la suite >The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S 21 ) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out on six different devices under different bias conditions with the ambient temperature varied from -40°C to 150°C. The low-frequency magnitude of S 21 is significantly reduced in GaN-based HEMTs when the temperature is increased. On the other hand, an operating bias point where this magnitude is temperature insensitive has been identified in GaAs-based HEMTs.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL