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TEM Investigation of the 3C/6H-SiC Transformation Interface in Layers Grown by Sublimation Epitaxy
Solid State Phenomena, 2010, 163, 97-100Article dans une revue scientifique -
Some Recent Results on the 3C-SiC Structural Defects
Solid State Phenomena, 2010, 159, 39-48Article dans une revue scientifique -
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
Materials Science Forum, 2010, 645-648, 383-386Article dans une revue scientifique -
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
Materials Science Forum, 2010, 645-648, 175-178Article dans une revue scientifique -
Sublimation epitaxy of cubic silicon carbide in vacuum
Journal of Physics. Conference Series, 2010, 223, 12014Article dans une revue scientifique -
The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
Materials Science Forum, 2010, 645-648, 367-370Article dans une revue scientifique