Modeling of access resistances and channel ...

Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
10.1007/s10973-022-11371-y
Title :
Modeling of access resistances and channel temperature estimation for GaN HEMT
Author(s) :
Islam, Shariful [Auteur]
Alim, Mohammad Abdul [Auteur]
Chowdhury, Abu Zahed [Auteur]
Gaquiere, Christophe [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Journal title :
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
Pages :
10991–10998
Publisher :
Springer Verlag
Publication date :
2022
ISSN :
1388-6150
English keyword(s) :
GaN HEMTs
Access resistances
Channel temperature
Thermal resistance
Modeling
Measurements
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access ...
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Language :
Anglais
Popular science :
Non
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Source :
Harvested from HAL