Title :

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

Author(s) :

Goguenheim, D [Auteur]
Institut Supérieur d'Electronique et du Numérique [ISEN-TOULON]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Bravaix, Alain [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mondon, F. [Auteur]
Université Joseph Fourier - Grenoble 1 - Institut universitaire de formation des maîtres - Académie de Grenoble [UJF IUFM Grenoble]
Jourdain, Marc [Auteur]
Université de Reims Champagne-Ardenne [URCA]
Meinertzhagen, A [Auteur]
Université de Reims Champagne-Ardenne [URCA]

Journal title :

Journal of Non-Crystalline Solids

Pages :

41-47

Publisher :

Elsevier

Publication date :

1999-04

ISSN :

0022-3093

English keyword(s) :

Stress-Induced Leakage Current
Fowler-Nordheim Injections
Schottky emission
Channel hot-electrons

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this study, we report on the electrical properties of the stress induced leakage current which appears through a 4.7 nm-thick SiO2 gate oxide of N-channel metal-oxide-semiconductor field effect transistors after localized ...
Show more >In this study, we report on the electrical properties of the stress induced leakage current which appears through a 4.7 nm-thick SiO2 gate oxide of N-channel metal-oxide-semiconductor field effect transistors after localized channel hot carrier injections and Fowler–Nordheim uniform injections. We show that channel hot hole injections are able to induce a stress leakage current leading at longer times to a gate current versus gate voltage similar to the one obtained after uniform injections in the Fowler–Nordheim mode, and well fitted by a Schottky law. However, the kinetics of both degradation modes differ. Other localized hot carrier injection modes (channel hot electron injections) appear to be less efficient in producing stress induced leakage current. Hole injection at the Si/SiO2 interface, present in both channel hole injections and negative gate voltage Fowler–Nordheim stresses via the anode hole injection mechanism, is found to be the key phenomenon leading to stress induced leakage current generation.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL