Titre :

Epitaxial growth and thermoelectric properties of c-axis oriented Bi 1−x Pb x CuSeO single crystalline thin films

Auteur(s) :

Wu, Xiaolin [Auteur]
Hebei University
Wang, Jianglong [Auteur]
Hebei University
Zhang, Hongrui [Auteur]
Wang, Shufang [Auteur]
Hebei University
Zhai, Shengjun [Auteur]
Hebei University
Li, Yaguang [Auteur]
Hebei University
Dogheche, El Hadj [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fu, Guangsheng [Auteur]
Hebei University

Titre de la revue :

Crystengcomm

Pagination :

8697-8702

Éditeur :

Royal Society of Chemistry

Date de publication :

2015-12-07

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Optique / photonique

Résumé en anglais : [en]

c-axis oriented Bi1−xPbxCuSeO (0 ≤ x ≤ 0.8) single crystalline thin films have been successfully epitaxially grown on SrTiO3 (001) substrates via the pulsed laser deposition technique. Detailed X-ray diffraction and ...
Lire la suite >c-axis oriented Bi1−xPbxCuSeO (0 ≤ x ≤ 0.8) single crystalline thin films have been successfully epitaxially grown on SrTiO3 (001) substrates via the pulsed laser deposition technique. Detailed X-ray diffraction and transmission electron microscopy measurements reveal the excellent c-axis and ab-plane texture of the films. As the Pb doping concentration increases, both the resistivity and the Seebeck coefficient decrease due to the increase in hole carrier concentration. The highest power factor of about 1.2 mW m−1 K−2 has been achieved in Bi0.96Pb0.06CuSeO single crystalline thin films at 673 K, which is much higher than those of polycrystalline ceramics with random orientation, suggesting that c-axis oriented BiCuSeO-based single crystalline thin films might have great potential for application in thermoelectric thin film devices.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Commentaire :

[JIF=3.849]

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL