Title :

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

Author(s) :

Koussir, H. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
LEFEBVRE, Isabelle [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Berthe, Maxime [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chernukha, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tranchant, J. [Auteur]
Institut des Matériaux de Nantes Jean Rouxel [IMN]
Corraze, B. [Auteur]
Institut des Matériaux de Nantes Jean Rouxel [IMN]
Janod, Etienne [Auteur]
Institut des Matériaux de Nantes Jean Rouxel [IMN]
Cario, Laurent [Auteur]
Institut des Matériaux de Nantes Jean Rouxel [IMN]
Grandidier, Bruno [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Diener, Pascale [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

Strongly Correlated Electron Systems (SCES 2020)

City :

Campinas

Country :

Brésil

Start date of the conference :

2021-09-27

Book title :

Journal of Physics: Conference Series, Volume 2164

Journal title :

Journal of Physics: Conference Series, Volume 2164, Strongly Correlated Electron Systems (SCES) 2020 27/09/2021 - 01/10/2021 Campinas, Brazil

Publication date :

2022

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]

English abstract : [en]

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals ...
Show more >The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a multiprobe setup with 4 nanopositionable tips under the supervision of a high resolution scanning electron microscop. We find a resistivity of 38 Ω.cm by four-point probe measurements, in agreement with the literature. The volatile insulator to metal transition is studied with a two probes configuration for interelectrode distances varying between 4 and 200 microns. Finite element simulations are performed to determine the spatial distribution of the electric field prior to the transition. Our results are in agreement with i) an intrinsic voltage threshold of 60 mV independent of the interelectrode distance ii) a maximum electric field close to the electrodes and iii) a threshold electric field of 0.2 kV/cm.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Transition de Mott hors équilibre pour la Nanoélectronique
ULNE

Comment :

SCES 2020 postponed: 27/09/2021 - 01/10/2021 Campinas, Brazil

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL