Titre :

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

Auteur(s) :

Martin, Evelyne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cristiano, Fuccio [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Lamrani, Youness [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]
Connetable, Damien [Auteur]
Laboratoire d'analyse et d'architecture des systèmes [LAAS]

Titre de la revue :

Materials Science and Engineering: B

Pagination :

397-400

Éditeur :

Elsevier

Date de publication :

2005-12

ISSN :

0921-5107

Mot(s)-clé(s) en anglais :

Génie mécanique
Transient enhanced diffusion
Dopant diffusion
Silicon
Evolution
SI
Dissolution
Point

Discipline(s) HAL :

Chimie/Matériaux

Résumé en anglais : [en]

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the ...
Lire la suite >In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first part, we determine the formation energies of the small clusters, the fault energy of the {113} defects, their Burgers vector and the self-diffusivity of silicon using TEM measurements and extractions of the supersaturation from the spreading of boron marker layers in low-dose implanted silicon. The improvements of the simulations are presented for the fitted experiments and for other wafers annealed at intermediate temperatures. In the second part, we increase the dose and energy of the non-amorphizing implant, leading to the transformation of {113} defects into dislocation loops. The predictions obtained with the optimised model are shown to be in agreement with the measurements. (c) 2005 Elsevier B.V. All rights reserved.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2022-09-30T02:51:15Z