Titre :

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Auteur(s) :

Leclaire, P [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Frayssinet, E [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Morelle, C [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Y [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Théron, Didier [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faucher, Marc [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]

Titre de la revue :

Journal of Micromechanics and Microengineering

Pagination :

105015

Éditeur :

IOP Publishing

Date de publication :

2016

ISSN :

0960-1317

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux

Résumé en anglais : [en]

We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin ...
Lire la suite >We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the resonant frequency. The electromechanical coupling efficiencies of integrated transducers are assessed and compared with previously obtained results on commercially available 2-µm thick epilayers used for power transistor applications. A 28 nm/V actuation efficiency is measured on the 700-nm thick structure which is slightly better than the one measured on the 2-µm buffer. The electrical response of a gate-less detector designed as a piezoresistance was carried out and a gauge factor of 60 was estimated. These results show that material issues can be unlocked to exploit the potentialities of III-nitrides for NEMS applications.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet ANR :

Réseau national sur GaN

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL