Title :

Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author(s) :

Cutivet, A. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Pavlidis, G. [Auteur]
Hassan, B. [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Bouchilaoun, M. [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Rodriguez, C. [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Soltani, Ali [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Graham, S. [Auteur]
Boone, F. [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
Maher, H. [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies Nanosystèmes [LN2 ]
OMMIC

Journal title :

IEEE Transactions on Electron Devices

Pages :

2139-2145

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2019-05

ISSN :

0018-9383

English keyword(s) :

Gallium nitride (GaN)
gate resistance thermometry (GRT)
high-electron-mobilitytransistors (HEMTs)
modeling
thermoreflectance
transient temperature measurement.

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal ...
Show more >Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL