[Invited] From research to production: how MBE can unlock GaN-on-Si technology

Semond, Fabrice; Rennesson, Stephanie; Tamariz, Sébastian; Carneiro, Elodie; Mehta, Jash Rinku; Medjdoub, Farid

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Titre :

[Invited] From research to production: how MBE can unlock GaN-on-Si technology

Auteur(s) :

Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Rennesson, Stephanie [Auteur]
Tamariz, Sébastian [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Carneiro, Elodie [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Titre de la manifestation scientifique :

The International Conference on Molecular Beam Epitaxy (ICMBE 2022)

Ville :

Sheffield

Pays :

Royaume-Uni

Date de début de la manifestation scientifique :

2022-09-04

Date de publication :

2022-09-05

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative ...
Lire la suite >MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative structures on silicon. Epitaxy on silicon necessarily requires a demonstration of scaling-up on large wafers used by the microelectronics industry. Properties of several epitaxial heterostructures grown on 200mm substrate are presented and discussed, emphasizing the originality of these structures and the beneficial contribution of MBE. Also, prospects and future challenges are discussed.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Réseau national sur GaN

Collections :