Titre :

Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications

Auteur(s) :

Chenini, Lynda [Auteur]
Université Saâd Dahlab Blida 1 [UB1]
Aissat, A. [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faculté De Technologie Blida1
Halbwax, Mathieu [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Physics Letters A

Pagination :

128711

Éditeur :

Elsevier

Date de publication :

2023-04

ISSN :

0375-9601

Mot(s)-clé(s) en anglais :

Semiconductor
Nanostructures
Lasers
Detection
Optoelectronic

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

AbstractThe present study reports the impact of structural parameters on optoelectronic properties of InGasb/GaSb based quantum well structures (Qws). The laser diodes are designed to operate at 2.3 μm at 300 K. Numerical ...
Lire la suite >AbstractThe present study reports the impact of structural parameters on optoelectronic properties of InGasb/GaSb based quantum well structures (Qws). The laser diodes are designed to operate at 2.3 μm at 300 K. Numerical calculations of the emission wavelength, optical and modal gain of TE mode in InGaSb/GaSb laser diode structure have been carried out for various well material compositions, well thickness, number of quantum wells and temperature. The optical confinement factor and threshold current density are also simulated and reported. The calculations were performed using the 8-bands k.p model. For an injected carrier concentration of 1.56 × 1018 cm−3 at 300 K, peak gain value of the order of 1400 cm−1 is reached and a modal gain of 94 cm−1 can be obtained. A threshold current density around 3 kA/cm2, is expected to be obtained through optical losses of about 50 cm−1. The results show that InGaSb/GaSb quantum wells are appropriate for mid-infrared lasers operating at 300 K.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL