High-Speed Uni-Travelling-Carrier Photodiodes ...
Type de document :
Article dans une revue scientifique: Article original
DOI :
Titre :
High-Speed Uni-Travelling-Carrier Photodiodes on Silicon Nitride.
Auteur(s) :
Maes, Dennis [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Department of Information Technology [INTEC]
Lemey, Sam [Auteur]
Department of Information Technology [INTEC]
Roelkens, Gunther [Auteur]
Department of Information Technology [INTEC]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Szriftgiser, Pascal [Auteur]
Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kuyken, Bart [Auteur]
Universiteit Gent = Ghent University = Université de Gand [UGENT]
Photonics Research Group
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Department of Information Technology [INTEC]
Lemey, Sam [Auteur]
Department of Information Technology [INTEC]
Roelkens, Gunther [Auteur]
Department of Information Technology [INTEC]
Zaknoune, Mohammed [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Szriftgiser, Pascal [Auteur]

Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 [PhLAM]
Peytavit, Emilien [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Ducournau, Guillaume [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kuyken, Bart [Auteur]
Universiteit Gent = Ghent University = Université de Gand [UGENT]
Photonics Research Group
Titre de la revue :
APL Photonics
Pagination :
016104, 6 pages
Éditeur :
AIP Publishing LLC
Date de publication :
2023-01-13
Mot(s)-clé(s) en anglais :
Silicon photonics
Photomixing
Hybrid integrated circuit
Photonic integrated circuits
Photodetectors
Photodiodes
Photonics
Photomixing
Hybrid integrated circuit
Photonic integrated circuits
Photodetectors
Photodiodes
Photonics
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Integrated photonics is an emerging technology for many existing and future tele- and data communication applications. One platform of particular interest is Silicon Nitride (SiN) thanks to - amongst others - its very ...
Lire la suite >Integrated photonics is an emerging technology for many existing and future tele- and data communication applications. One platform of particular interest is Silicon Nitride (SiN) thanks to - amongst others - its very low-loss waveguides. However, it lacks active devices, such as lasers, amplifiers and photodiodes. For this, hybrid or heterogeneous integration is needed. Here, we bring high-speed uni-travelling-carrier photodiodes (UTC PDs) to a low-loss SiN-platform by means of micro-transfer-printing. This versatile technology for heterogeneous integration not only allows very dense and material-efficient III-V integration, it also eases fabrication yielding high-performance detectors. The waveguide-coupled photodiodes feature a responsivity of 0.3 A/W at 1550 nm, a dark current of 10 nA and a bandwidth of 155 GHz at a low bias. At zero bias, a record bandwidth of 135 GHz is achieved. We further demonstrate that this integrated detector can be used for direct photomixing at terahertz frequencies. A back-to-back communication link with a carrier frequency around 300 GHz is set up, and data rates up to 160 Gbit/s with low error vector magnitude (EVM) are shown, showcasing near-identical performance at zero bias.Lire moins >
Lire la suite >Integrated photonics is an emerging technology for many existing and future tele- and data communication applications. One platform of particular interest is Silicon Nitride (SiN) thanks to - amongst others - its very low-loss waveguides. However, it lacks active devices, such as lasers, amplifiers and photodiodes. For this, hybrid or heterogeneous integration is needed. Here, we bring high-speed uni-travelling-carrier photodiodes (UTC PDs) to a low-loss SiN-platform by means of micro-transfer-printing. This versatile technology for heterogeneous integration not only allows very dense and material-efficient III-V integration, it also eases fabrication yielding high-performance detectors. The waveguide-coupled photodiodes feature a responsivity of 0.3 A/W at 1550 nm, a dark current of 10 nA and a bandwidth of 155 GHz at a low bias. At zero bias, a record bandwidth of 135 GHz is achieved. We further demonstrate that this integrated detector can be used for direct photomixing at terahertz frequencies. A back-to-back communication link with a carrier frequency around 300 GHz is set up, and data rates up to 160 Gbit/s with low error vector magnitude (EVM) are shown, showcasing near-identical performance at zero bias.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :
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