Titre :

Novel mm-Wave Oscillator Based on an Electromagnetic Bandgap Resonator

Auteur(s) :

Lia, Enrico [Auteur]
Agence Spatiale Européenne = European Space Agency [ESA]
Ghosh, Indra [Auteur]
Hanham, Stephen [Auteur]
University of Birmingham [Birmingham]
Walter, Benjamin [Auteur]
Vmicro SAS
Bavedila, Fuanki [Auteur]
Vmicro SAS
Faucher, Marc [Auteur]
Vmicro SAS
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Gregory, Andrew [Auteur]
University of Oxford
Jensen, Leif [Auteur]
Buchholz, Jan [Auteur]
Fischer, Horst [Auteur]
Max Planck Institute for Chemistry [MPIC]
Altmann, Ulrich [Auteur]
Follmann, Rüdiger [Auteur]

Titre de la revue :

IEEE Microwave and Wireless Technology Letters

Pagination :

863-866

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2023-05-01

ISSN :

2771-957X

Mot(s)-clé(s) en anglais :

Dielectric materials
dielectric resonator
microwave oscillators
monolithic microwave integrated circuits (MMICs)
photonic crystals

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

This letter introduces a novel millimeter (mm)-wave oscillator concept based on an electromagnetic bandgap (EBG) resonator (also called a photonic crystal resonator). To realize an ultralow phase noise monolithic microwave ...
Lire la suite >This letter introduces a novel millimeter (mm)-wave oscillator concept based on an electromagnetic bandgap (EBG) resonator (also called a photonic crystal resonator). To realize an ultralow phase noise monolithic microwave integrated circuit (MMIC) oscillator, an EBG resonator is developed by introducing a periodic structure into an ultrahigh resistivity silicon wafer to create an EBG which confines a localized resonant mode with a reduced mode dielectric filling factor of 47%. The measured results of the resonator demonstrate an unloaded Q-factor of 108300 can be achieved at 45 GHz. Measured oscillator phase noise levels of −91.5, −121.5, and −133 dBc/Hz are obtained at offset frequencies of 1, 10, and 100 kHz, respectively.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Commentaire :

Use of the Rights Retention Strategy

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL