Titre :

Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy

Auteur(s) :

Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Bubbendorff, Jean-Luc [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

Solid-State Electronics

Pagination :

1085-1089

Éditeur :

Elsevier

Date de publication :

1999

ISSN :

0038-1101

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) nanolithography techniques based on local oxidation of silicon/titanium and electron beam exposure of PMMA are described. It is shown that a 10 nm ...
Lire la suite >Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) nanolithography techniques based on local oxidation of silicon/titanium and electron beam exposure of PMMA are described. It is shown that a 10 nm resolution can routinely be achieved using tapping-mode AFM-based anodization of silicon and titanium operated in air. The thickness and width of oxide stripes are studied as a function of the applied probe-sample voltage and the speed of the tip. Exposure of PMMA resist (950 K, 3%) is also demonstrated using contact-mode AFM to control the tip/surface interaction through a constant force and field emission of electrons to expose the resist.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL