Titre :

Adaptive mesh refinement for multilayer process simulation using the finite element method

Auteur(s) :

Baccus, Bruno [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Collard, Dominique [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Pagination :

396-403

Éditeur :

IEEE

Date de publication :

1992

ISSN :

0278-0070

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique
Mathématiques [math]/Analyse numérique [math.NA]
Sciences de l'ingénieur [physics]/Génie des procédés

Résumé en anglais : [en]

An adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant concentration ratio inside each element, together with a prediction ...
Lire la suite >An adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant concentration ratio inside each element, together with a prediction technique, minimizing the interpolation errors. A significant reduction in CPU time is obtained by automatic grid refresh. Several methods were tested. The mesh adequacy is evaluated with bipolar test structures using analytical punch-through voltage calculations. Applications of these methods are presented in two ways. First, an advanced trench-isolated polysilicon bipolar transistor was simulated to show the general possibilities of the techniques, and second, a coupled process and device simulation approach allows the evaluation of the scheme on real structures in relation to experimental measurements.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL