Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure

Aissat, A.; Chenini, L.; Laidouci, A.; Nacer, S.; Vilcot, Jean-Pierre

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1016/j.mseb.2023.117071

Title :

Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure

Author(s) :

Aissat, A. [Auteur]
Faculté De Technologie Blida1
Chenini, L. [Auteur]
Faculté De Technologie Blida1
Laidouci, A. [Auteur]
Faculté De Technologie Blida1
Nacer, S. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Materials Science and Engineering: B

Pages :

117071

Publisher :

Elsevier

Publication date :

2024-02

ISSN :

0921-5107

English keyword(s) :

Materials
New semiconductor
Thin film
Optical properties
Solar cells
Photovoltaic

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and ...
Show more >This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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