Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure

Aissat, A.; Chenini, L.; Laidouci, A.; Nacer, S.; Vilcot, Jean-Pierre

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1016/j.mseb.2023.117071

Titre :

Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure

Auteur(s) :

Aissat, A. [Auteur]
Faculté De Technologie Blida1
Chenini, L. [Auteur]
Faculté De Technologie Blida1
Laidouci, A. [Auteur]
Faculté De Technologie Blida1
Nacer, S. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Materials Science and Engineering: B

Pagination :

117071

Éditeur :

Elsevier

Date de publication :

2024-02

ISSN :

0921-5107

Mot(s)-clé(s) en anglais :

Materials
New semiconductor
Thin film
Optical properties
Solar cells
Photovoltaic

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and ...
Lire la suite >This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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