Browsing by Author "Frayssinet, Éric"
Now showing items 1-4 of 4
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Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits
Defrance, Nicolas; Okada, Etienne; Albany, Florent; et al.WOCSDICE 2019, Cabourg, 17-06-2019, 17-06-2019Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique
Camus, Julien; Simon, Quentin; Aït Aïssa, Keltouma; et al.European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, Strasbourg, 2013Autre communication scientifique (congrès sans actes - poster - séminaire...) -
GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers
Cordier, Yvon; Frayssinet, Éric; Chmielowska, Magdalena; et al.Physica Status Solidi (c), Wiley, 2014, 11; 3-4, 498-501Compte-rendu et recension critique d'ouvragefulltext -
Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Cordier, Yvon; Semond, Fabrice; Moreno, Jean-Christophe; et al.Materials Science in Semiconductor Processing, Elsevier, 2009, 12, 16-20Compte-rendu et recension critique d'ouvragefulltext