Type de projet
Résultats 1-5 de 5
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An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, 11-01-2021, Institute of Electrical and Electronics Engineers Inc., 2021Communication dans un congrès avec actes -
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Solid-State Electronics, Elsevier, 2022, 188, 108210Compte-rendu et recension critique d'ouvragetexte intégral -
New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor
Semiconductor Science and Technology, IOP Publishing, 2021, 36; 3, 034002Compte-rendu et recension critique d'ouvragetexte intégral -
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Semiconductor Science and Technology, IOP Publishing, 02-2021, 36; 2, 024001Compte-rendu et recension critique d'ouvragetexte intégral -
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Journal of Crystal Growth, Elsevier, 01-09-2022, 593, 126779Compte-rendu et recension critique d'ouvragetexte intégral