[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors

Medjdoub, Farid

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Title :

[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors

Author(s) :

Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Conference title :

XXII International Workshop on Physics of Semiconductor Devices

Conference organizers(s) :

Indian Institute of Technology Madras
Society for Semiconductor Devices (SSD) Semiconductor Society (India)

City :

Madras

Country :

Inde

Start date of the conference :

2023-12-13

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE ...
Show more >Power-added-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-average ratio and large instantaneous bandwidth required for 5G applications for instance. Overall, a high PAE is mandatory in order to reduce the power dissipation, which is a major issue for future compact solid-state power amplifiers. GaN-based High electron mobility transistors (HEMTs) on SiC substrate have already demonstrated attractive efficiencies in the mm-wave range. However, state-of-the-art GaN HEMT PAE performances are typically limited to 50% or below in the Ka-band and above, especially for high power densities > 3 W/mm. This is mainly due to the lack of power gain, the enhanced trapping effects and reduced electron confinement when downscaling the device size. In this talk, promising solutions based on highly scaled epitaxial heterostructures will be addressed, enabling mm-wave high performances and robustness.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Réseau national sur GaN

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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