fmax = 800 GHz with 75 nm gate length and ...

Document type :
Autre communication scientifique
Title :
fmax = 800 GHz with 75 nm gate length and asymmetric gate recess forInGaAs/InAlAs PHEMT
HAL domain(s) :
Sciences de l'ingénieur [physics]
Language :
Anglais
Collections :
Source :
Harvested from HAL