Title :

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Author(s) :

Li, Ke [Auteur]
Coventry University
Evans, Paul Leonard [Auteur]
University of Nottingham, UK [UON]
Johnson, Christopher Mark [Auteur]
University of Nottingham, UK [UON]
Videt, Arnaud [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697
Idir, Nadir [Auteur]
Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697

Journal title :

Energies

Abbreviated title :

Energies

Volume number :

14

Pages :

2092

Publisher :

MDPI

Publication date :

2021-04-09

ISSN :

1996-1073

English keyword(s) :

GaN-HEMT
dynamic RDSon
power electronics
compact model
simulation
switching transients
power losses

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and ...
Show more >In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Administrative institution(s) :

Université de Lille
Centrale Lille
Arts et Métiers Sciences et Technologies
Junia HEI

Collections :

• Laboratoire d'Électrotechnique et d'Électronique de Puissance (L2EP) - ULR 2697

Research team(s) :

Équipe Électronique de puissance

Submission date :

2024-10-03T16:10:07Z
2024-10-10T14:31:12Z