Determination of activation parameters for ...
Type de document :
Article dans une revue scientifique
URL permanente :
Titre :
Determination of activation parameters for dislocation formation from a surface in fcc metals by atomistic simulations
Auteur(s) :
Hirel, P. [Auteur]
Godet, J. [Auteur]
Brochard, S. [Auteur]
Pizzagalli, L. [Auteur]
Beauchamp, P. [Auteur]
Godet, J. [Auteur]
Brochard, S. [Auteur]
Pizzagalli, L. [Auteur]
Beauchamp, P. [Auteur]
Titre de la revue :
Physical Review B
Nom court de la revue :
Phys. Rev. B
Numéro :
78
Éditeur :
American Physical Society (APS)
Date de publication :
2008-08-12
Résumé en anglais : [en]
Defects in free surfaces are expected to be seeds for the nucleation of dislocations, which is the likely way nanoscale materials suffer plastic deformation. The nucleation results in the competition between the image force ...
Lire la suite >Defects in free surfaces are expected to be seeds for the nucleation of dislocations, which is the likely way nanoscale materials suffer plastic deformation. The nucleation results in the competition between the image force attracting the dislocation to the surface and the applied strain. In this work, two methods based on molecular dynamics simulations using an embedded atom method (EAM) potential are used to determine the activation energy and the critical radius for the formation of dislocations from a surface defect in a typical fcc metal.Lire moins >
Lire la suite >Defects in free surfaces are expected to be seeds for the nucleation of dislocations, which is the likely way nanoscale materials suffer plastic deformation. The nucleation results in the competition between the image force attracting the dislocation to the surface and the applied strain. In this work, two methods based on molecular dynamics simulations using an embedded atom method (EAM) potential are used to determine the activation energy and the critical radius for the formation of dislocations from a surface defect in a typical fcc metal.Lire moins >
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Non spécifiée
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Date de dépôt :
2020-02-21T10:30:12Z